? semiconductor components industries, llc, 1997 october, 2016 ? rev. 14 publication order number: bat54alt1/d 1 bat54al schottky barrier diodes these schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. extremely low forward voltage reduces conduction loss. miniature surface mount package is excellent for hand held and portable applications where space is limited. features ? extremely fast switching speed ? low forward voltage ? 0.35 v (typ) @ i f = 10 madc ? s prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t j = 125 c unless otherwise noted) rating symbol value unit reverse voltage v r 30 v forward power dissipation @ t a = 25 c derate above 25 c p f 225 1.8 mw mw/ c forward current (dc) i f 200 max ma non?repetitive peak forward current t p < 10 msec i fsm 600 ma repetitive peak forward current pulse wave = 1 sec, duty cycle = 66% i frm 300 ma junction temperature t j ?55 to 150 c storage temperature range t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 30 volt schottky barrier detector and switching diodes device package shipping ? ordering information sot?23 (to?236) case 318 style 12 marking diagram anode 3 cathode 1 2 cathode bat54al t1g sot?23 (pb?free) 3,000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. 1 b6m b6 = device code m = date code* = pb?free package (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. bat54al t3g sot?23 (pb?free) 10,000/tape & ree l sbat54al t1g sot?23 (pb?free) 3,000/tape & reel sbat54al t3g sot?23 (pb?free) 10,000/tape & ree l www. onsemi.com
bat54al www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 a) v (br)r 30 ? ? v total capacitance (v r = 1.0 v, f = 1.0 mhz) c t ? 7.6 10 pf reverse leakage (v r = 25 v) i r ? 0.5 2.0 adc forward voltage (i f = 0.1 ma) (i f = 1.0 ma) (i f = 10 ma) (i f = 30 ma) (i f = 100 ma) v f ? ? ? ? ? 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 v reverse recovery time (i f = i r = 10 madc, i r(rec) = 1.0 madc, figure 1) t rr ? ? 5.0 ns product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2 k 820 0.1 f dut v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1 ma output pulse (i f = i r = 10 ma; measure d at i r(rec) = 1 ma) i f input signal figure 1. recovery time equivalent test circuit
bat54al www. onsemi.com 3 c t , total capacitance (pf) 100 0.0 0.1 v f , forward voltage (volts) 0.2 0.3 0.4 0.5 10 1.0 0.1 85 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 510 15 20 25 14 0 v r , reverse voltage (volts) 12 4 2 0 51015 30 figure 2. forward voltage figure 3. leakage current figure 4. total capacitance ?40 c 25 c t a = 150 c t a = 125 c t a = 85 c t a = 25 c 0.6 ?55 c 150 c 125 c 100 1000 30 25 20 6 8 10 i r , reverse current ( a) i f , forward current (ma)
bat54al www. onsemi.com 4 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended style 12: pin 1. cathode 2. cathode 3. anode on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bat54alt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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